Introduction to terahertz
Semiconductor terahertz radiation source, the principle of semiconductor terahertz radiation can be summarized into two aspects, namely photoinduced multiplication effect and surface electric field effect. Photomultiplication effect is to excite some semiconductors with narrow band gaps by laser pulses, which shows that the vertical asymmetry of excited carrier distribution will cause macroscopic charge movement, thus exciting terahertz radiation.
The surface electric field effect is that for some semiconductors with wide band gaps, there are surface states on their surfaces. Due to the inconsistency between the surface and the internal Fermi level, the surface electric field will be generated. Due to the existence of this electric field, the carriers excited by laser will generate transient current, thus forming terahertz radiation.